, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf power ldmos transistor BLF2045 features ? typical 2-tone performance at a supply voltage of 26 v and idq of 500 ma - output power = 30 w (pep) - gain = 12.5 db - efficiency = 32% - dlm = -26dbc ? easy power control ? excellent ruggedness ? high power gain ? excellent thermal stability ? designed for broadband operation (1800 to 2200 mhz) ? internally matched for ease of use. applications ? rf power amplifiers for gsm, edge, cdma and w-cdma base stations and multicarrier applications in the 1800 to 2200 mhz frequency range ? broadcast drivers. pinning - sot467c pin 1 2 3 description drain gate source, connected to flange o 2 o 3 top view fig.1 simplified outline. description 30 w ldmos power transistor for base station applications at frequencies from 1800 to 2200 mhz. quick reference data rf performance at th = 25 c in a common source test circuit. mode of operation 2-tone, class-ab f (mhz) fi = 2000; \ = 2000.1 vds (v) 26 pl (w) 30 (pep) gp (db) >10 no (%) >30 dim (dbc) <-25 n.i semi-c (inductors reserves the righl to change lest conditions, parameter limits and package dimensions without notice information furnished by nj semi-cunducton ? believed to he holh accurate ami reliable a the lime or guing to press. however ni semi-i niijuuior* .iwumcs no responsibility hir ;iny errors or uinivsitms discovered in its use nj seini-k.oinjtn.tirs encou miitnpcrs invents ihm ihiinshcets ;ire uirrcnr before placing .
uhf power ldmos transistor BLF2045 limiting values in accordance with the absolute maximum rating system (iec 60134). symbol vds vgs id tstg tj parameter drain-source voltage gate-source voltage drain current (dc) storage temperature junction temperature min. - - - -65 - max. 65 15 4.5 +150 200 unit v v a c c thermal characteristics symbol rth j-h parameter thermal resistance from junction to heatsink conditions ptot = 87.5 w; th = 25 c; note 1 value 2.1 unit k/w note 1. thermal resistance is determined under specified rf operating conditions. uhf power ldmos transistor BLF2045 characteristics tj = 25 c unless otherwise specified. symbol v(br)dss vestn idss bsx igss 9fs rpson ciss coss crss parameter drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance conditions vgs = 0; id = 0.7 ma vds = 10v; id = 70ma vgs = 0; vds = 26 v vgs = vgsth + 9v;vds = 10v vgs = 15v;vds = 0 vds = 10v; id = 2.5 a vgs = vgsth + 9 v; id = 2.5 a vgs = 0; vds = 26 v; f = 1 mhz vgs = 0; vds = 26 v; f = 1 mhz vgs = 0; vds = 26 v; f = 1 mhz min. 65 1.5 - g - - - - - - typ. - - - - - 2 340 38 31 1.7 max. - 3.5 5 - 125 - - - - - unit v v ^a a na s mi pf pf pf
uhf power ldmos transistor BLF2045 application information rf performance in a common source class-ab circuit. th = 25 c; rth mb-h - 0.65 k/w, unless otherwise specified. mode of operation 2-tone, class-ab f (mhz) ^ = 2000; \ = 2000.1 vds (v) 26 idq (ma) 180 pl (w) 30 (pep) gp (db) >10 t!d (%) >30 djm (dbc) <-25 ruggedness in class-ab operation the BLF2045 is capable of withstanding a load mismatch corresponding to vswr = 10:1 through all phases under the following conditions: vds = 26 v; pl = 30 w (cw); f = 2000 mhz. 20 gp (db) 12 8 4 0 c class-ab f! = 2000 fig.3 mcd890 / / _gp id / ? / / ^ ? ? ^ ^?__ ?^ -?=^ -^^. 10 20 30 40 5 pl (pep) (w) operation; vds = 26 v; idq = 180 ma; mhz; f2 = 2000.1 mhz. power gain and efficiency as function peak envelope load power; typical val 50 40 30 10 0 d 3 of ues.
t a i i i i i 1 ^ 3 i i ~i ' ! f ! t t h u2 i \ ?*? e 10 mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) unit mm inch a 4.67 3.94 0.184 0.155 b 5.59 5.33 0.220 0.210 c 0.15 0.10 0.006 0.004 d 9.25 9.04 0.364 0.356 1 9.27 9.02 0.365 0.355 e 5.92 5.77 0.233 0.227 e! 5.97 5.72 0.235 0.225 f 1.65 1.40 0.065 0.055 h 18.54 17.02 0.73 0.67 p 3.43 3.18 0,135 0.125 q 2.21 1.96 0.087 0.077 q 14.27 0.562 "1 20.45 20.19 0.805 0.795 u2 5.97 5.72 0.235 0.225 *1 0.25 0.010 w2 0.51 0.020 outline version sot467c references iec jedec eiaj
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